器件名称:
TIP31C
功能描述:
Si-Epitaxial PlanarTransistors
文件大小:
36.86KB 共2页
简 介:
TIP31, TIP31A ... C NPN Version 2004-06-29 General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Collector current – Kollektorstrom Plastic case Kunststoffgehuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert 1=B 2=C 3=E 3A TO-220AB 2.2 g Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings (TA = 25°C) TIP31 Collector-Emitter-voltage Collector-Emitter-voltage Emitter-Base-voltage without cooling – ohne Kühlung with cooling – mit Kühlung Grenzwerte (TA = 25°C) TIP31A 60 V 60 V 5V 2 W 1) 40 W 3 A (dc) 5A 1A 150°C - 65…+ 150°C TIP31B 80 V 80 V TIP31C 100 V 100 V VCE0 VEB0 Ptot 40 V 40 V B open C open B shorted VCES Power dissipation – Verlustleistung TC =25°C Ptot IC ICM IB Tj TS Collector current – Kollektorstrom Peak Collector current Kollektor-Spitzenstrom Base current – Basisstrom Junction temp. – Sperrschichttemp. Storage temp. – Lagerungstemperatur Characteristics, Tj = 25°C Min. Collector saturation volt. – Kollektor-Sttigungsspannung IC = 3 A, IB = 375 mA Base-Emitter voltage – Basis-Emitter-Spannung VCE = 4 V, IC = 3 A VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A 1 Kennwerte, Tj = 25°C Typ. – – – – Max. 1.2 V 1.8 – 50 VCEsat - VBEon hFE hFE – – 25 10 DC current gain – Kollektor-Basis-Stromverhltnis ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalte……
