器件名称:
TIP31C
功能描述:
Silicon Epitaxial Planar Transistor
文件大小:
61.46KB 共1页
简 介:
GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V TYP MAX 100 100 3 5 40 1.2 2.0 UNIT V V A A W V V s VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 3A; IB =0.4A IF = 3A ICsat = 3.0A; f = 16KHz 1.5 0.5 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 100 100 5 3 1 40 150 150 UNIT V V v A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=100V VEB=5V IC=1mA IC = 3A; IB = 0.4A IC = 1A; VCE = 5V IC = 0.5A; VCE = 10V VCB = 10V IC=3A,IB1=-IB2=0.3A,VCC=30V IC=3A,IB1=-IB2=0.3A,VCC=30V IC=3A,IB1=-IB2=0.3A,VCC=30V TYP 100 25 3.0……
