器件名称:
TIP31C
功能描述:
Plastic-Encapsulated Transistors
文件大小:
58.47KB 共1页
简 介:
Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors TIP31/31A/31B/31C FEATURES Power dissipation PCM: 2 W (Tamb=25℃) TRANSISTOR (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter 31 Collector-base breakdown voltage 31A 31B 31C 31 Collector-emitter breakdown voltage 31A 31B 31C Emitter-base breakdown voltage 31 31A 31B 31C 31/31A 31B/31C V(BR)EBO V(BR)CEO V(BR)CBO 123 TJ, Tstg: -55℃ to +150℃ unless otherwise specified) Test conditions MIN 40 Ic= 100 A, IE=0 60 80 100 40 Ic= 30 mA, IB=0 60 80 100 IE= 100A, IC=0 VCB= 40V, IE=0 VCB= 60V, IE=0 VCB= 80V, IE=0 VCB= 100V, IE=0 5 V V V MAX UNIT Symbol Collector cut-off current ICBO 0.2 mA Collector cut-off curremt ICEO VCE= 30V , IB= 0 VCE= 60V , IB= 0 0.3 0.3 1 10 25 1.2 1.8 3 50 mA Emitter cut-off current IEBO hFE(1) VEB=5V, IC=0 VCE= 4V, IC= 3A VCE= 4V, IC= 1A IC=3A, IB=375mA VCE= 4V, IC=3A VCE=10V , IC=500mA mA DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(on) fT V V MHZ Transition frequency ……
