器件名称:
2N5672
功能描述:
HIGH CURRENT FAST SWITCHING APPLICATIONS
文件大小:
323.58KB 共3页
简 介:
NPN 2N5671 – 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX VCER IC IB PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage VEB = -1.5V, REB = 50 Collector-Emitter Voltage REB <= 50 Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature @ TC = 25° Ratings 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 Value 90 120 120 150 7.0 120 150 110 140 30 10 140 200 -65 to +200 Unit V V V V V A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N5671 2N5672 Value 1.25 Unit °C/W COMSET SEMICONDUCTORS 1/3 NPN 2N5671 – 2N5672 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCER(SUS) RBE=50 VCEX(SUS) ICEO ICEX IEBO hFE VCE(SAT) VBE(SAT) Ratings Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage (1) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Test Condition(s) 2N5671 2N5672 2N5671 IC=0.2 A , RBE=50 2N5672 2N5671 IC=0.2 A , VBE=-1.5V , RBE=50 2N5672 2N5671 VCE=80 V 2N5672 VCE=110 V, VEB=-1.5 V, 2N567……
