器件名称:
2N5672
功能描述:
Silicon NPN Power Transistors
文件大小:
112.9KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION With TO-3 package High current ,high speed APPLICATIONS Intended for high current and fast switching industrial applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5671 Collector-base voltage 2N5672 2N5671 VCEO VEBO IC IB PD Tj Tstg Collector-emitter voltage 2N5672 Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 120 7 30 10 140 200 -65~200 V A A W Open emitter 150 90 V CONDITIONS VALUE 120 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5671 IC=0.2A ;IB=0 2N5672 IC=15A; IB=1.2A IC=15A ;IB=1.2A IC=15A ; VCE=5V VCE=80V; IB=0 2N5671 Collector cut-off current 2N5672 2N5671 2N5672 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistion frequency VCE=110V; VBE(off)=1.5V VCE=135V; VBE(off)=1.5V VCE=100V;VBE(off)=1.5V; TC=150 120 0.75 1.5 1.6 10 12 10 mA 15 10 10 20 20 40 MHz 100 mA V V V mA CONDITIONS MIN 90 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat VBEsat VBE ICEO Collector-emitter s……
