器件名称:
2N5672
功能描述:
Silicon NPN Power Transistors
文件大小:
124.5KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION ·With TO-3 package ·High current ,high speed APPLICATIONS ·Intended for high current and fast switching industrial applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO 固电 IN Collector-base voltage 体 半导 PARAMETER CONDITIONS 2N5671 Open emitter 2N5672 VCEO Collector-emitter voltage VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current G N A CH 2N5671 2N5672 IC M E ES Open base Open collector TC=25℃ OND R O T UC VALUE 120 150 90 120 7 30 10 140 200 -65~200 UNIT V V V A A W ℃ ℃ Base current Total Power Dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5671 IC=0.2A ;IB=0 2N5672 IC=15A; IB=1.2A IC=15A ;IB=1.2A IC=15A ; VCE=5V VCE=80V; IB=0 2N5671 2N5672 2N5671 VCE=110V; VBE(off)=1.5V VCE=135V; VBE(off)=1.5V 120 0.75 1.5 1.6 10 12 10 mA VCE=100V;VBE(off)=1.5V; TC=150℃ V V V mA CONDITIONS MIN 90 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage VCEsat VBEsat VBE ICEO Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector ……
