器件名称: 2N3054
功能描述: Silicon NPN Power Transistors
文件大小: 137.04KB 共4页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3054 2N3054A
DESCRIPTION With TO-66 package APPLICATIONS Designed for general purpose switching and amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Power dissipation Junction temperature Storage temperature 2N3054 2N3054A TC=25 Open emitter Open base Open collector CONDITIONS VALUE 90 55 7 4 2 25 75 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER 2N3054 Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 /W UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150 VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V IC=0.2A ; VCE=10V;f=1MHz
2N3054 2N3054A
SYMBOL VCEO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 hFE-2 fT
MIN 55
TYP.
MAX
UNIT V
1……
