器件名称:
2N3054
功能描述:
Silicon NPN Power Transistors
文件大小:
166.8KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A DESCRIPTION ·With TO-66 package APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER CONDITIONS Open emitter Open base Open collector 体 导 半 固电 Collector-base voltage Collector-emitter voltage Emitter-base voltage INC Collector current Base current M E S E HANG 2N3054 TC=25℃ 2N3054A DU N O IC CTOR 90 55 7 4 2 25 VALUE UNIT V V V A A W Power dissipation Junction temperature Storage temperature 75 200 -65~200 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER 2N3054 Rth j-C Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 ℃/W UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150℃ VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V 2N3054 2N3054A MIN 55 TYP. ……
