器件名称:
2N5631
功能描述:
Silicon NPN Power Transistors
文件大小:
112.24KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type 2N6031 High collector-emitter sustaining voltage High DC current gain@IC=8A Low collector saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5631 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 7 16 20 5.0 200 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A ; VCE=2V ……
