器件名称:
2N5631
功能描述:
Silicon NPN Power Transistors
文件大小:
122.18KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6031 ·High collector-emitter sustaining voltage ·High DC current gain@IC=8A ·Low collector saturation voltage APPLICATIONS ·For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5631 Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER 固 导体 半 电 Open base Fig.1 simplified outline (TO-3) and symbol N A H INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature Collector-base voltage M E S GE CONDITIONS Open emitter D N O IC R O T UC VALUE 140 140 7 16 20 5.0 UNIT V V V A A A W ℃ ℃ Open collector TC=25℃ 200 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEO ICEX IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current CONDITIONS IC=0.2A ;I……
