器件名称:
2N5631
功能描述:
POWER TRANSISTORS COMPLEMENTARY SILICON
文件大小:
118.79KB 共8页
简 介:
ON Semiconductort NPN PNP High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. 2N5631 2N6031 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS High Collector Emitter Sustaining Voltage – VCEO(sus) = 140 Vdc High DC Current Gain – @ IC = 8.0 Adc hFE = 15 (Min) Low Collector–Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc Rating Symbol VCEO VCB VEB IC IB MAXIMUM RATINGS (1) Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Value 140 140 7.0 16 20 Unit Vdc Vdc Vdc Adc Adc Collector Current – Continuous Peak Base Current – Continuous 5.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 200 1.14 Watts W/_C _C TJ, Tstg –65 to +200 CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol θJC Max Unit 0.875 _C/W (1) Indicates JEDEC Registered Data. 200 PD, POWER DISSIPATION (WATTS) 150 100 50 0 0 20 40 60 80 100 120 140 TC, TEMPERATURE (°C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed. Semiconductor Components Industries, LLC, 2001 1 May, 2001 – Rev. 0 Publication Order Number: 2N5631/D ……
