器件名称:
2N3019
功能描述:
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS
文件大小:
67.65KB 共4页
简 介:
2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 o C at T case ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 140 80 7 1 0.8 5 -65 to 200 200 Unit V V V A W W o o C C 1/4 November 1997 2N3019 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 35 219 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = 90 V V CB = 90 V V EB = 5 V I C = 100 A 140 T case = 150 o C Min. Typ. Max. 10 10 10 Unit nA A nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 10 mA 80 V I E = 100 A 7 V V CE(sat) V BE(sat) h FE I C = 150 mA I C = 500 mA I C = 150 mA I C = 0.1 mA I C = 10 mA I C……
