器件名称:
2N3019
功能描述:
NPN SILICON TRANSISTOR
文件大小:
17.62KB 共2页
简 介:
2N3019 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON TRANSISTOR FEATURES NPN High Voltage Planar Transistor Hermetic TO39 Package 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. Full Screening Options Available 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45 TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD PD Tj Tstg Rjc Rja Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Max Junction Temperature Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 140V 80V 7V 1A 0.8W 4.6mW / °C 5W 28.6mW / °C 200°C –55 to 200°C 16.5°C / W 89.5°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim.6/99 2N3019 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO* V(BR)EBO* ICBO IEBO VCE(sat) VBE(sat) Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Tes……
