器件名称:
2N3019
功能描述:
Type 2N3019 Geometry 4500 Polarity NPN
文件大小:
45.53KB 共2页
简 介:
Data Sheet No. 2N3019 Type 2N3019 Geometry 4500 Polarity NPN Qual Level: JAN - JANS Features: General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case. Also available in chip form using the 4500 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/391 which Semicoa meets in all cases. Radiation Graphs available. Generic Part Number: 2N3019 REF: MIL-PRF-19500/391 TO-5 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 80 140 7.0 1.0 -55 to +175 -55 to +175 Unit V V V mA o C C o Data Sheet No. 2N3019 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC= 100 A Collector-Emitter Breakdown Voltage IC =0 3A m Emi tte r-B ase Br eak dow nV olt age IE = 100 A Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICES IEBO Min 140 80 7.0 ----- Max ------10 10 Unit V V V nA nA ON Characteristics DC Current Gain IC = 150 mA, VCE = 10 V IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V (pulse test) IC = 500 mA, VCE = 10 V (pulse test) IC = 1 A, VCE = 10 V (pulse test) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) Base-Emitter Satura……
