器件名称:
FDS9933
功能描述:
Dual P-Channel 2.5V Specified PowerTrench MOSFET
文件大小:
372.37KB 共5页
简 介:
FDS9933 September 2006 FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –5 A, –20 V, RDS(ON) = 55 m @ VGS = –4.5 V RDS(ON) = 90 m @ VGS = –2.5 V Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications Load switch Motor drive DC/DC conversion Power management D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings –20 ±12 (Note 1a) Units V V A W –5 –30 2 1.6 1 0.9 –55 to +175 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking 9933 2006 Fairchild Semiconductor International Device FDS9933 Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS9933 Rev C ……
