器件名称:
TIP127
功能描述:
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:
251.64KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127 Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built–In Base–Emitter Shunt Resistors TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP120, TIP125 60 60 TIP121, TIP126 80 80 TIP122, TIP127 100 100 Symbol VCEO VCB VEB IC IB PD PD E Unit Vdc Vdc Vdc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 5.0 8.0 Collector Current — Continuous Peak Base Current 120 mAdc Watts W/_C Watts W/_C mJ Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range 65 0.52 2.0 0.016 50 Unclamped Inductive Load Energy (1) TJ, Tstg – 65 to + 150 TIP120* TIP121* TIP122* PNP TIP125* TIP126* TIP127* *Motorola Preferred Device NPN DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 – 100 VOLTS 65 WATTS _C THERMAL ……
