器件名称:
MMBTH10
功能描述:
NPN Silicon VHF/UHF Transistor
文件大小:
224.72KB 共5页
简 介:
MMBTH10 NPN Silicon VHF/UHF Transistor P b Lead(Pb)-Free BASE COLLECTOR 3 1 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 25 30 3.0 50 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ, Tstg V alue 225 1.8 556 -55 to +150 Unit mW mW/ C C/W C Device Marking MMBTH10=3EM ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, I B =0) Collector-Base Breakdown Voltage (IC= 100 uAdc, I E =0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, I C=0) Collector Cutoff Current (VCB= 25Vdc, I E=0) Emitter Cutoff Current (VEB= 2.0 V dc, I C =0) 1. FR-5=1.0 I I 0.75 I I 0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 25 30 3.0 Max 100 100 Unit Vdc Vdc Vdc nAdc nAdc WEITRON http://www.weitron.com.tw 1/5 29-Aug-05 MMBTH10 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C=4.0 mAdc, V CE=10 Vdc) Collector-Emitter Saturation Voltage (IC=4.0 mAdc, I B =0.4 mAdc) Base-Emitter On Voltage (I C =4.0 mVdc, VCE =10 V) h FE V CE(sat) VBE(on) 60 0.5 Vdc - 0.95 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C=4.0 mAdc, V CE=……
