器件名称:
1N60
功能描述:
SMALL SIGNAL SCHOTTKY DIODES
文件大小:
72.87KB 共3页
简 介:
R 1N60, 1N60P S E M I C O N D U C T O R SMALL SIGNAL SCHOTTKY DIODES DO-35 FEATURES Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop Extremely low reverse current I R JF Ultra speed switching characteristics Small temperature coefficient of forward characteristics Satisfactory w ave detection efficiency For use in recorder, TV ,radio and telephone as detectors Super high speed switching cirits, small current rectifier High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1.083(27.5) MIN 0.079(2.0) MAX DIA 0.150(3.8) MAX MECHANICAL DATA Case: DO-35 glass case Polarity:color band denotes cathode end Weight: Approx. 0.13 gram 0.020(0.52) MAX DIA 1.083(27.5) MIN Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Value Symblos Parameters Repetitive Peak Reverse Voltage Forward Continuous Current Peak Forward Surge Current(t=1s) Storage and junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case TA=25 C 1N60 40 30 150 -55 to+75 75 1N60P 40 50 400 Units Volts mA mA C C VRRM IF IFSM TSTG TJ ELECTRICAL CHARACTERISTICS Value Symblos Parameters Test Conditions IF=1mA 1N60 1N60P 1N60 1N60P 1N60 1N60P 1N60 1N60P Min. Typ. 0.35 0.26 0.70 0.70 1.0 5.0 4.0 Max. 0.5 0.5 1.0 1.0 5.0 10.0 Units Volts VF IR CJ h trr RqJA Forward Voltage Reverse Current Junction Capacitance Detection Efficienc……