器件名称:
2N4403
功能描述:
NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小:
153.64KB 共6页
简 介:
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N4400, 2N4401 2N4402, 2N4403 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching Applications C EB DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX 5,33 5,20 4,19 0,55 0,50 1,40 1,53 – 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = BASE 3 = COLLECTOR ABSOLUTE MAXIMM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation At Ta=25 C Derate Above 25 C Power Dissipation At Tc=25 C Derate Above 25 C Operating & Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 83.3 C/W C/W Junction to Ambient Rth (j-a) 200 ELECTRICAL CHARACTERISTICS (Ta =25 C unless otherwise specified) T j ,Tstg PD Symbol VCEO VCBO V EBO IC PD 2N4400/01 40 60 6 600 625 5.0 1.5 12 -55 to +150 2N4402/03 40 40 5 V V V mA mW mW/C W mW/C C Units Continental Device India Limited Data Sheet Page 1 of 6 2N4400, 2N4401 2N4402, 2N4403 Characteristic Collector Emitter Voltage IC=1mA, IB =0 Collector Base Voltage IC=100A, IE =0 Emitter Base Voltage IE=100A, I C=0 Base Cutoff Current VCE =35V, VBE=0.4V Collector Cutoff Current VCE =35V, VBE=0.4V Collector-Emitter Saturation Voltage IC=150mA, I B =15mA IC=500mA, I B =50mA Base-Emitter Saturation Voltage IC=150mA, I B =15mA IC=500mA,I B……
