器件名称:
2N4403
功能描述:
General Purpose Transistors PNP Silicon
文件大小:
212.93KB 共7页
简 介:
2N4403 General Purpose Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2N4403 -40 -40 -5.0 -600 -625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc mW C C DEVICE MARKING 2N4403=2N4403 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (1) (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0) Base Cutoff Current (VCB= -35 Vdc, IE=0) Collect Cutoff Current(VCE = -35 Vdc, I B =0) 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO I CEO Min -40 -40 -5.0 Max -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON 2N4403 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC= -0.1 mAdc, VCE=-1.0 Vdc) (IC= -1.0 mAdc, VCE=-1.0 Vdc) (IC= -10 mAdc, VCE=-1.0 Vdc) (IC= -150 mAdc, VCE=-2.0 Vdc) (1) (IC= -500 mAdc, VCE=-2.0 Vdc) (1) Collector-Emitter Saturation Voltage (1) (IC= -150 mAdc, IB= -15 mAdc) (IC=- 500 mAdc, IB= -50 mAdc) Base-Emitter Saturation Voltage (1) (IC= -150 mAdc, IB= -15 mAdc) (IC= -500 mAdc, IB=- 50 mAdc) hFE 30 60 100 100 20 -0.75 300 -0.4 -0.75 -0.95 -1.3……