器件名称:
2N4403
功能描述:
General Purpose Transistors(PNP Silicon)
文件大小:
297.77KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4402/D General Purpose Transistors PNP Silicon 2N4402 2N4403* *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 40 5.0 — — — — — 0.1 0.1 Vdc Vdc Vdc Adc Adc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Dio……