器件名称:
2N6036
功能描述:
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
文件大小:
87.1KB 共6页
简 介:
2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s 2N6036 IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER DESCRIPTION The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 7 K R2 Typ. = 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. O perating Junction Temperature o Value 2N6036 2N6039 80 80 5 4 8 0.1 40 -65 to 150 150 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative. June 1997 1/6 2N6036/2N6039 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 83.3 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEX I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = rated V CEO V CE = rated V CBO V CE = rated V CEO V EB = 5 V I C = 100 mA I……
