器件名称:
BAT86
功能描述:
Schottky Diodes
文件大小:
44.61KB 共2页
简 介:
NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT86 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES For general purpose applications. This diode features low turn-on voltmax. .079 (2.0) max. .150 (3.8) age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Cathode Mark min. 1.083 (27.5) Metal-on-silicon Schottky barrier device which is max. .020 (0.52) This diode is also available in the Mini-MELF case with the type designation BAS86. Dimensions in inches and (millimeters) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Continuous Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Forward Current at tp < 1 s, υ ≤ 0.5, Tamb = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Min. – – – – – –65 –65 Max. 50 2001) 5001) 2001) 125 +125 +150 Unit V mA mA mW °C °C °C VR IF IFRM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. 5/98 222 BAT86 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature……
