器件名称:
BAT86
功能描述:
Schottky barrier diode
文件大小:
31.02KB 共6页
简 介:
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BAT86 Schottky barrier diode Product specication Supersedes data of April 1992 1996 Mar 20 Philips Semiconductors Product specication Schottky barrier diode FEATURES Low forward voltage Guard ring protected Hermetically-sealed leaded glass package. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION BAT86 Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. k handbook, halfpage a MAM193 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IF(AV) PARAMETER continuous reverse voltage continuous forward current average forward current CONDITIONS PCB mounting, lead length = 4 mm; VRWM = 25 V; a = 1.57; δ = 0.5; Tamb = 50 °C; see Fig.2 tp ≤ 1 s; δ ≤ 0.5 tp ≤ 10 ms 65 65 MIN. MAX. 50 200 200 V mA mA UNIT IFRM IFSM Tstg Tj Tamb repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature 500 5 +150 125 +125 mA A °C °C °C 1996 Mar 20 2 Philips Semiconductors Product specication Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specied. SYMBOL VF PARAMETER forward voltage se……
