器件名称:
BAT86
功能描述:
Small-Signal Diode
文件大小:
56.48KB 共1页
简 介:
BAT86 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation BAS86. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Continuous reverse voltage Forward continuous current at Tamb=25 C Repetitive peak forward current at tp<1s, υ<0.5, Tamb=25oC Power dissipation at Tamb=25 C Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range o o Symbol VR IF IFRM Ptot RθJA Tj Tamb TS Value 50 200 500 200 300 (1) Unit Volts mA mA mW o (1) (1) (1) C/W o 125 -65 to +125 -65 to +150 C C C o o Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Leakage current Symbol V(BR)R IR Test Condition IR=10uA (pulsed) VR=40V IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=1V, f=1MHz IF=10mA, IR=10mA, to IR=1mA Min. 50 - Typ. 0.3 0.200……
