器件名称:
1N914
功能描述:
Switching Diode - Silicon epitaxial planar type
文件大小:
71.64KB 共2页
简 介:
Switching Diode 1N914 Silicon epitaxial planar type Formosa MS DO-35 Features Low power loss, high efficiency High reliability High speed ( trr < 4 ns ) 1.141(29.0) 1.102(28.0) .083(2.10) .051(1.30) DIA. .169(4.30) .146(3.70) Mechanical data Case : Glass, DO-35 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.13 gram .022(.55) .018(.45) DIA. 1.141(29.0) 1.102(28.0) Dimensionsininchesand(millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Non-Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward voltage Forward current Average forward current Power dissipation Junction temperature Storage temperature VR = 0 tp = 1 us CONDITIONS Symbol VRM VR IFSM IFRM IF IFAV PV Tj TSTG -55 MIN. TYP. MAX. 100 75 1.0 250 150 75 250 175 +175 UNIT V V A mA mA mA mW o o C C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER Forward voltage IF = 5mA IF = 10mA VR = 20V Reverse current VR = 20V , Tj = 150 o C VR = 75V Breakdown current Diode capacitance Rectification efficiency IR = 100uA , TP /T = 0.01 TP = 0.3ms VR = 0 , f = 1MHz , VHF = 50mV VHF = 2V , f = 100MHz IF = IR = 10mA , IRR = 1mA Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM CONDITIONS Symbol VF VF IR IR IR V(BR) CD nR trr trr 45 8 4 100 4.0 MIN. 0.62 0.86 TYP. MAX. 0.72 1.00 25 50 5.0 UNIT V V nA uA uA V pF % ns ns RATING AND ……