器件名称:
1N914
功能描述:
HIGH SPEED SILICON SWITCHING DIODE
文件大小:
382.61KB 共3页
简 介:
Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL VR Reverses Voltage ( Continuous) VRRM Repetitive Peak Reverse Voltage Average Forward Current TA =25C IF (AV) IF (AV) TA =150C IF Forward Current (D.C.) IFRM Repetitive Peak Forward Current Non Repetitive Peak Surge Current IFSM tp=1sec Ptot Power Dissipation Tstg Storage Temperature Tamb Operating ambient Temperature ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VF Forward Voltage IF=10 IN914/916 IF=100mA, 1N914B IF=5mA, Reverse Breakdown Voltage Reverse Current V(BR)R IR IR=100A VR= 20V VR= 75V VR= 20V, Tj=150C VALUE 75 100 75 10 75 225 500 250 -65 to +200 -65 to +175 UNIT V V mA mA mA mA mA mW C C MIN TYP MAX 1.0 1.0 0.72 UNIT V V V V nΑ A 0.62 100 25 5 Diode Capacitance Reverse Recovery Time Cd trr VR=0, f=1MHz IF=10mA to IR=10mA RL=100 Measured at IR=1mA IF=10mA to IR=60mA RL=100 Measured at IR=1mA 2.5 8 pF ns 4 ns IN914, B IN916 250mW DO- 35 Glass Axial Package DO-35 Glass Axial Package A B A DIM A C D B NOTES 1. Cathode is marked by Band. 2. All dimensions are in mm. C D MIN 25.40 3.03 0.46 1.52 MAX — 4.44 0.56 2.29 DO-35, 52mm Taping Specification 1.05 MAX. 1.5 R MAX. 5.50 4.50 52 mm Taping Specification 1. T & A indicates Axial Tape & Ammo packing……