器件名称:
2N3904
功能描述:
GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS
文件大小:
16.91KB 共2页
简 介:
LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3904 GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES 5.33 (0.210) 4.32 (0.170) SILICON PLANAR EPITAXIAL NPN TRANSISTOR CECC SCREENING OPTIONS HIGH SPEED SATURATED SWITCHING 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO-18 METAL PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD RqJA TSTG , TJ Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 25°C Thermal Resistance Junction – Ambient Operating and Storage Temperature Range @ TA =25°C 60V 40V 6V 200mA 350mW 3.33mW / °C 300°C/W –55 to +175°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 12.7 (0.500) min. Prelim. 7/00 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions V(BR)CEO* V(BR)CBO V(BR)EBO IBL ICEX VCE(sat) VBE(sat)* Collector – Emitter Breakdown Voltage IC = 1mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Base Cut-off Current Collector – Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage IC = 10mA IE = 10mA VEB = 3V IC = 10mA IC = 50mA IC = 10mA IC = 50mA IB = 1mA IB = 5mA IB = 1mA IB = 5mA IC = 0.1mA IC = 1……
