器件名称:
2N3904
功能描述:
Silicon NPN Epitaxial General Purpose Amplifier
文件大小:
194.65KB 共6页
简 介:
2N3904 Silicon NPN Epitaxial General Purpose Amplifier REA03G0001-0200Z Rev.2.00 Jul.22.2004 Features Low saturation voltage General purpose amplifier and switching The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier Outline TO-92 (1) 1. Emitter 2. Base 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 60 40 6 200 625 150 –55 to +150 Ratings V V V mA mW °C °C Unit Rev.2.00, Jul.22.2004, page 1 of 5 2N3904 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Base cutoff current Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO IBL ICEX hFE Min 60 40 6 — — 40 70 100 60 30 — — 0.65 — — — — — Typ — — — — — — — — — — — — — — 540 1.9 5.9 1.0 Max — — — 50 50 — — 300 — — 0.2 0.3 0.85 0.95 — — — — Unit V V V nA nA — — — — — V V V V MHz pF pF dB Test Conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCE = 30 V, VEB = 3 V VCE = 30 V, VEB = 3 V VCE = 1 V, IC = 100 A VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IB = 50 mA VCE = 1 V, IB = 100 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCE = 20 V, IC = 10 mA VCE = 5 V, IE = 0, f = 1 MHz V……