器件名称:
2N3904
功能描述:
NPN General Purpose Transistors
文件大小:
581.3KB 共4页
简 介:
2N3904 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 40 60 6.0 200 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0) Collector Cutoff Current (VCE= 40 Vdc, I B =0) Collector Cutoff Current (VCB= 60 Vdc, IE=0) Emitter Cutoff Current (VEB= 5.0Vd c, I C=0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min 40 60 6.0 Max 0.1 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON 2N3904 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= 10 mAdc, VCE=1.0 Vdc) DC Current Gain (IC= 50 mAdc, VCE= 1.0 Vdc) Collector-Emitter Saturation Voltage (IC= 50 mAdc, IB= 5 mAdc) Base-Emitter Saturation Voltage (IC= 50 mAdc, IB= 5 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100 MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 100 60 300 - 400 0.3 0.95 Vdc Vdc - - MHz Classification of hFE(1) Rank Range O 100-200 Y 200-300 G 300-400 WEITRON 2N3904 FIG1 FIG2 WEITRON http://www.weitron.com.tw ……
