器件名称:
2N3904
功能描述:
NPN General Purpose Amplifier
文件大小:
96.49KB 共4页
简 介:
MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N3904 Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View NPN General Purpose Amplifier TO-92 A E C B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10 Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10 Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0Vdc) (I C=100mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=5.0Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100 Adc, VCE=5.0Vdc, RS=1.0k f=10Hz to 15.7kHz) Delay Time (VCC=3.0Vdc, VBE=0.5Vdc Rise Time IC=10mAdc, IB1=1.0mAdc) Storage Time (VCC=3.0Vdc, IC=10mAdc Fall Time IB1=IB2=1.0mAdc) ≤ 300 s, Duty Cycle ≤ 2.0% Min 40 60 6.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX B ON CHARACTERISTICS hFE 40 70 100 60 30 C 300 VCE(sat) 0.2 0.3 0.65 0.85 0.95 Vdc D VBE(sat) Vdc SMALL-SIGNAL CHARACTERIST……
