器件名称:
TIP112
功能描述:
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:
269.51KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP110/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. High DC Current Gain — hFE = 2500 (Typ) @ IC = 1.0 Adc Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115 VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116 VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117 Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc Monolithic Construction with Built–in Base–Emitter Shunt Resistors TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP110, TIP115 60 60 TIP111, TIP116 80 80 TIP112, TIP117 100 100 TIP110 TIP111* TIP112* TIP115 TIP116* TIP117* *Motorola Preferred Device NPN PNP Symbol VCEO VCB VEB IC IB Unit Vdc Vdc Vdc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 2.0 4.0 50 Collector Current — Continuous Peak Base Current mAdc Watts W/_C Watts W/_C mJ Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Unclamped Inductive Load Energy — Figure 13 Operating and Storage Junction PD PD E 50 0.4 2.0 0.016 25 TJ, Tstg – 65 to + 150 DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 – 100 VOLTS 50 WATTS _C THERMAL CHARACTERISTICS Characteristics Symbol RθJC RθJA……
