器件名称:
TIP112
功能描述:
Darlington Power Transistors (NPN)
文件大小:
194.09KB 共4页
简 介:
Darlington Power Transistors (NPN) TIP110/111/112 Darlington Power Transistors (NPN) Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto TC=25°C TIP110 60 60 TIP111 80 80 5.0 2.0 4.0 50 50 2.0 16 62.5 2.5 -65 to +150 TIP112 100 100 Unit V V V A A mA W W mW/° C ° C /W ° C /W °C VCBO VCEO VEBO IC ICM IB PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA RθJC TJ, TSTG Thermal Resistance from Junction to Ambient in Free Air Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-06-13 Page 1 of 4 Darlington Power Transistors (NPN) TIP110/111/112 Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol Description Min. Max. Unit Conditions 1000 2.5 2.8 2.0 1.0 2.0 V V V V V mA mA mA VCE=4V, IC=1A VCE=4V, IC=2A *hFE D.C. Current Gain 500 TIP110 60 80 100 - *VCEO(sus) Collector-Emitter Sustaining Voltage TIP111 ……
