器件名称: TIP112
功能描述: Silicon NPN Darlington Power Transistor
文件大小: 149.36KB 共2页
简 介:MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
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TIP110/111/112
Features
The complementary PNP types are the TIP115/116/117 respectively Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Marking: Part number
Silicon NPN Darlington Power Transistor
Absolute Maximum Ratings @ Ta = 25℃(unless otherwise noted)
Symbol
VCBO TIP110 TIP111 TIP112 VCEO TIP110 TIP111 TIP112 VEBO
Parameter
Collector-base voltage (Open emitter)
Value
Unit
V
TO-220AB
B F C S Q T A
60 80 100 60 80 100
Collector-emitter voltage (Open base) Emitter-base Voltage(Open collector)
V
5 IC Collector Current 2 ICM Collector Current Pulse 4 IB Base Current 0.05 Total Device Dissipation(Ta=25℃) 2 PC Total Device Dissipation(Tc=25℃) 50 TJ Junction Temperature 150 TSTG Storage Temperature Range -65 to +150 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max
VCEO(SUS) TIP110 TIP111 TIP112 VCE(sat) VBE ICBO TIP110 TIP111 TIP112 ICEO TIP110 TIP111 TIP112 IEBO Hfe Collector-emitter sustaining voltage ( IC=30mA; IB=0) Collector-emitter Saturation Voltage ( IC=2A IB=-0.008A ) Base-emitter Voltage ( IC=2A ; VCE=4V ) Collector cut-off current (VCB=60V; IE=0) (VCB=80V; IE =0) (VCB=100V; IE =0) Collector cut-off current (VCE=30V; VEB=0) (VCE=40V; VEB=0) (VCE=50V; VEB=0) Emitter cut-off ……
