器件名称:
TIP112
功能描述:
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
文件大小:
72.23KB 共6页
简 介:
TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 2 3 APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP115 and TIP117. TO-220 1 INTERNAL SCHEMATIC DIAGRAM R 1 T yp.= 7K R 2 T yp.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tcas e ≤ 25 C o T amb ≤ 25 C Storage T emperature o Value TIP110 TIP115 60 60 5 2 4 50 50 2 -65 to 150 150 TIP112 TIP117 100 100 Uni t V V V A A mA W W o o C C Max. O perating Junction Temperature * For PNP types voltage and current values are negative June 1999 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I CBO I EBO Parameter Collector Cut-off Curre……
