器件名称:
TIP112
功能描述:
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUIL
文件大小:
74.82KB 共2页
简 介:
SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117. H L C TIP112 EPITAXIAL PLANAR NPN TRANSISTOR A R S E F D P Q T C MAXIMUM RATING (Ta=25) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse DC Ta=25 Tc=25 SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 100 100 5 2 4 50 2 50 150 -65150 UNIT V V V A K 1 J M M 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB mA W EQUIVALENT CIRCUIT B C O 2 3 DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 0.20 Φ3.60 + 3.00 6.70 MAX _ 0.50 13.60 + 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 0.20 9.50 + _ 0.20 8.00 + 2.90 MAX N G B R1 = 10k R2 = 0.6k E ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance SYMBOL ICEO ICBO IEBO hFE VCEO(SUS) VCE(sat) VBE(ON) Cob TEST CONDITION VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=1A VCE=4V, IC=2A IC=30mA, IB=0 IC=2A, IB=8mA VCE=4V, IC=2A VCB=10V, IE=0, f=0.1MHz MIN. 1000 500 100 TYP. MAX. 2 ……
