器件名称:
TIP112
功能描述:
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
文件大小:
103.01KB 共3页
简 介:
UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R110k, R20.6) B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp IB Pc Pc Tj TSTG VALUE 100 100 5 2 4 50 2 50 150 -65 ~ +150 UNIT V V V A A mA W W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector-Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output capacitance SYMBOL VCEO(SUS) ICBO ICEO IEBO hFE VCE(sat) VBE(on) Cob TEST CONDITIONS IC=30mA, IB=0 VCB=100V, IE=0 VCE=50V, IB=0 VBE=5V, IC=0 IC=1A, VCE=4V IC=2A, VCE=4V IC=2A, IB=8mA VCE=4V, IC=2A VCB=10V, IE=0, f=0.1MHz MIN. 100 TYP. MAX. 1 2 2 UNIT V mA mA mA 1000 500 2.5 2.8 100 V V pF UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R203-022,A UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R203-022,A UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR UTC assumes no responsibility for equipm……
