器件名称: 2N3055
功能描述: Silicon NPN Power Transistors
文件大小: 151.46KB 共4页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3055
DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 20–70 @ IC = 4 Adc Collector–Emitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for general–purpose switching and amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 60 7 15 7 115 150 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current With base forward biased Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=0.2A ;RBE=100A IC=4A ;IB=0.4A IC=10A ;IB=3.3……