器件名称:
2N3055
功能描述:
NPN POWER SILICON TRANSISTOR
文件大小:
57.52KB 共2页
简 介:
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC Value 70 100 7.0 7.0 15 6.0 117 -65 to +200 Max. 1.5 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 34.2 mW/0C for TA > +250C 2) Derate linearly @ 668 mW/0C for TC > +250C 0 TO-3* (TO-204AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol V(BR)CEO V(BR)CER V(BR)CEX ICEO ICEX IEBO Min. 70 80 90 1.0 1.0 1.0 Max. Unit Vdc Vdc Vdc mAdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBE = 100 Collector-Emitter Breakdown Voltage VBE = -1.5 Vdc, IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc; VCE = 100 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3055 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. 40 20 5.0 Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 0.5 Adc,……