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2N3055

器件名称: 2N3055
功能描述: isc Silicon NPN Power Transistor
文件大小: 110.25KB 共3页
生产厂商: ISC
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简　　介: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955 APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC IB B 2N3055 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 100 70 60 7 15 7 115 200 -65~200 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.52 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 Is/b fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product CONDITIONS IC=200mA ; IB=0 IC=200mA ; ……
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