EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询：
400万器件资料库等您来搜！
首页>STMICROELECTRONICS> 2N3055

2N3055

器件名称: 2N3055
功能描述: COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小: 47.01KB 共4页
生产厂商: STMICROELECTRONICS
下　　载: 在线浏览点击下载
简　　介: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CER V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE ≤ 100 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200 V V V V A A W o o Unit C C For PNP types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO IEBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 30 V V EB = 7 V I C = 200 mA 60 T j = 150 o C Min. Typ. Max. 1 5 0.7 5 Unit mA mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) VCER(sus) Collector-Emitter Sustaining Volt……
相关电子器件
器件名 功能描述 生产厂商
2N3055ESMD Bipolar NPN Device in a Hermetically sealed SEME-LAB
2N3055A Bipolar NPN Device in a Hermetically sealed TO3 SEME-LAB
2N3055H isc Silicon NPN Power Transistor ISC
2N3055A isc Silicon NPN Power Transistor ISC
2N3055A Silicon NPN Power Transistors SAVANTIC
2N3055 isc Silicon NPN Power Transistor ISC
2N3055 Silicon NPN Power Transistors SAVANTIC
2N3055 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR DCCOM
2N3055 Silicon NPN Power Transistors JMNIC
2N3055 POWER LINEAR AND SWITCHING APPLICATIONS COMSET
2N3055SD Power Transistors ETC
2N3055HV NPN POWER TRANSISTOR TEL
2N3055HV TO-3 Power Package Transistors (NPN) ETC
2N3055H Complementary Silicon Power Transistors ONSEMI
2N3055G Complementary Silicon Power Transistors ONSEMI
2N3055G Complementary Silicon Power Transistors ONSEMI
2N3055E Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. SEME-LAB
2N3055AG Complementary Silicon High-Power Transistors ONSEMI
2N3055A_06 Complementary Silicon High-Power Transistors ONSEMI
2N3055A Complementary Silicon High-Power Transistors ONSEMI
2N3055A COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS BOCA
2N3055A 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS MOTOROLA
2N3055A COMPLEMENTARY SILICON POWER TRANSISTORS ONSEMI
2N3055A POWER TRANSISTORS(15A) MOSPEC
2N30556 TO-3 Power Package Transistors (NPN) ETC
2N3055_MJ2955 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS MOTOROLA
2N3055_08 Complementary power transistors STMICROELECTRONICS
2N3055 Complementary power transistors STMICROELECTRONICS
2N3055 SILICON PLANAR POWER TRANSISTORS TEL
2N3055 SILICON NPN TRANSISTORS UTC
2N3055 Complementary Silicon Power Transistors ONSEMI
2N3055 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package SEME-LAB
2N3055 Power Transistors ETC
2N3055 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS MOTOROLA
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS STMICROELECTRONICS
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS BOCA
2N3055 NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES SIEMENS
2N3055 POWER TRANSISTORS(15A,50V,115W) MOSPEC
2N3055 Complementary Silicon Power Transistors ONSEMI
2N3055 TO-3 Power Package Transistors (NPN) ETC
2N3055 NPN POWER SILICON TRANSISTOR MICROSEMI
2N3055 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS MOTOROLA
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2